mechanical data e}? ? dice size a x :450um,a y :330um,b x :85um,b y :85um wafer size 4(gross die:82,000pcs/good die>76,260pcs) chip thickness 138um12um scribe line width 60um top metal al - for wire bonding back side metal ti - ni - ag for soldering parameter ^?u}o }v]?}v? so hv]? reverse stand - of voltage v rwm 5 v peak pulse power p pp tp=8/20us 150 w peak pulse current i pp tp=8/20us 4 a electrostatc discharge v esd iec61000 - 4 - 2 level 4 8(contact) kv max.juncton temp. t j + 150 parameter ^?u}o }v]?}v d]vx d??x d?x hv]? breakdown voltage v br i t =1ma 6.4 9.0 v reverse leakage current i r v r =5v 0.9 ua clamping voltage v c i pp =1a i pp =4a 15.0 25.0 v diode capacitancd pin1 to 2 c j v r =0v f=1mh z 0.35 0.4 pf characteristcs ta=25 low clamping chip bi - directional tvs diode FESD5VC2M1L new design for csp notes: ( 1)sampling testng:no bad dice inking/guaranteed good die >93% (2)testng follow customer (3)tj=ta+rth(j - a)*(pf+pr),where rth(j - a) - thermal resistance,pf - forward power dissipaton, pr - revers power dissipaton (4)**for device testng ew1608e5 - fw - a futurewafer technology co.,ltd www.futurewafer.com.tw+886 - 3 - 3573583
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